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Data Sheet 300mA RF ULDO REGULATOR General Description
The AP2210 is a 300mA ULDO regulator which provides very low noise, ultra low dropout voltage (typically 250mV at 300mA), very low standby current (1A maximum) and excellent power supply ripple rejection (PSRR 75dB at 100Hz) in battery powered applications, such as handsets, PDAs and in noise sensitive applications, such as RF electronics. The AP2210 also features individual logic compatible enable/shutdown control inputs, a low power shutdown mode for extended battery life, over current protection, over temperature protection, as well as reversed-battery protection. The AP2210 has 2.5V, 2.8V, 3.0V and 3.3V versions. The AP2210 is available in space saving SOT-23-3 and SOT-23-5 packages.
AP2210 Features
* * * * * * * * * * * * Up to 300mA Output Current Excellent ESR Stability Low Standby Current Low Dropout Voltage: VDROP=250mV at 300mA High Output Accuracy: 1% Good Ripple Rejection Ability: 75dB at 100Hz and IOUT=100A Tight Load and Line Regulation Low Temperature Coefficient Over Current Protection Thermal Protection Reverse-battery Protection Logic-controlled Enable
Applications
* * * * * * Cellular Phones Cordless Phones Wireless Communicators PDAs/Palmtops PC Mother Board Consumer Electronics
SOT-23-3
SOT-23-5
Figure 1. Package Types of AP2210
Mar. 2007 Rev. 1. 2 1
BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Pin Configuration AP2210
N Package (SOT-23-3)
VIN VIN 3 GND 1 2 EN GND VOUT
K Package (SOT-23-5)
1 2 3
5
VOUT
4
BYP
Figure 2. Pin Configuration of AP2210 (Top View)
Pin Description
Pin Number Pin Name SOT-23-3 1 2 3 SOT-23-5 2 5 1 3 GND VOUT VIN EN Ground Regulated output voltage Input voltage Enable input: CMOS or TTL compatible input. Logic high=enable, logic low=shutdown Bypass capacitor for low noise operation Function
4
BYP
Mar. 2007 Rev. 1. 2 2
BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Functional Block Diagram
3 (1) 2 (5)
AP2210
VIN
VOUT
BYP
(4)
Bandgap Ref.
EN
(3)
Current Limit Thermal Shutdown
A (B) A for SOT-23-3 B for SOT-23-5
1 (2)
GND
Figure 3. Functional Block Diagram of AP2210
Ordering Information
AP2210 E1: Lead Free Blank: Tin Lead TR: Tape and Reel Package N: SOT-23-3 K: SOT-23-5 2.5: Fixed Output 2.5V 2.8: Fixed Output 2.8V 3.0: Fixed Output 3.0V 3.3: Fixed Output 3.3V
Part Number Tin Lead Lead Free AP2210N-2.5TRE1 SOT-23-3 -40 to 125oC AP2210N-2.8TRE1 AP2210N-3.0TRE1 AP2210N-3.3TRE1 AP2210K-2.5TR SOT-23-5 -40 to 125oC AP2210K-2.5TRE1 AP2210K-2.8TRE1 AP2210K-3.0TR AP2210K-3.3TR AP2210K-3.0TRE1 AP2210K-3.3TRE1 K5H K5K K5C Marking ID Tin Lead Lead Free EH2 EH3 EH4 EH5 E5C E5F E5H E5K Packing Type Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel
Circuit Type
Package
Temperature Range
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Mar. 2007 Rev. 1. 2 3
BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Absolute Maximum Ratings (Note 1)
Parameter Supply Input Voltage Enable Input Voltage Power Dissipation Lead Temperature (Soldering, 10sec) Junction Temperature Storage Temperature ESD (Machine Model) Thermal Resistance (No Heatsink) Symbol VIN VEN PD TLEAD TJ TSTG ESD SOT-23-3 JA SOT-23-5 Value 15 15 Internally Limited (Thermal Protection) 260 150 -65 to 150 300 200 200
oC/W
AP2210
Unit V V W
o
C
oC oC
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Supply Input Voltage Enable Input Voltage Operating Junction Temperature Symbol VIN VEN TJ Min 2.5 0 -40 Max 13.2 13.2 125 Unit V V
oC
Mar. 2007 Rev. 1. 2 4
BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Electrical Characteristics AP2210-2.5 Electrical Characteristics
VIN=3.5V, IOUT=100A, CIN=1.0F, COUT=2.2F, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol VOUT/VOUT VOUT/ (VOUT/VOUT)/T VRLINE VRLOAD VIN=3.5V to 13.2V IOUT=0.1mA to 300mA IOUT=100A IOUT=50mA Dropout Voltage (Note 5) VDROP IOUT=100mA IOUT=150mA IOUT=300mA Standby Current ISTD VEN0.4V (shutdown) VEN0.18V (shutdown) VEN2.0V, IOUT=100A VEN2.0V, IOUT=50mA Ground Pin Current (Note 6) IGND VEN2.0V, IOUT=150mA VEN2.0V, IOUT=300mA Ripple Rejection Current Limit Output Noise PSRR ILIMIT eno f=100Hz, IOUT=100A VOUT=0V IOUT=50mA, COUT=2.2F, 100pF from BYP to GND 1.3 100 Conditions Variation from specified VOUT Min -1 -2 120 48 1.5 4.5 12 1 6 30 15 50 70 110 150 230 140 250 300 165 275 350 250 400 500 0.01 1 5 150 180 350 600 800 1.9 2.5 4 10 15 75 450 260 900 dB mA
nV / Hz
AP2210
Typ
Max 1 2
Unit % V/oC ppm/oC mV
mV
mV
A
A
mA
Mar. 2007 Rev. 1. 2 5
BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2210-2.5 Electrical Characteristics
VIN=3.5V, IOUT=100A, CIN=1.0F, COUT=2.2F, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2), unless otherwise specified. Parameter Enable Input Logic-low Voltage Enable Input Logic-high Voltage Enable Input Logic-low Current Symbol VIL VIH IIL IIH Conditions Regulator shutdown Regulator enabled VIL0.4V VIL0.18V VIL2.0V VIL2.0V 5 2.0 0.01 1 2 20 25 A Min Typ Max 0.4 0.18 V A Unit V
AP2210
Enable Input Logic-high Current
Note 2: Specifications in bold type are limited to -40oCTJ125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oCTJ125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current.
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BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2210-2.8 Electrical Characteristics
VIN=3.8V, IOUT=100A, CIN=1.0F, COUT=2.2F, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol VOUT/VOUT VOUT/ (VOUT/VOUT)/T VRLINE VRLOAD VIN=3.8V to 13.2V IOUT=0.1mA to 300mA IOUT=100A IOUT=50mA Dropout Voltage (Note 5) VDROP IOUT=100mA IOUT=150mA IOUT=300mA Standby Current ISTD VEN0.4V (shutdown) VEN0.18V (shutdown) VEN2.0V, IOUT=100A VEN2.0V, IOUT=50mA Ground Pin Current (Note 6) IGND VEN2.0V, IOUT=150mA VEN2.0V, IOUT=300mA Ripple Rejection Current Limit Output Noise PSRR ILIMIT eno f=100Hz, IOUT=100A VOUT=0V IOUT=50mA, COUT=2.2F, 100pF from BYP to GND 1.3 100 Conditions Variation from specified VOUT Min -1 -2 120 42.8 1.5 4.5 12 1 6 30 15 50 70 110 150 230 140 250 300 165 275 350 250 400 500 0.01 1 5 150 180 350 600 800 1.9 2.5 4 10 15 75 450 260 900 dB mA
nV / Hz
AP2210
Typ
Max 1 2
Unit % V/oC ppm/oC mV
mV
mV
A
A
mA
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BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2210-2.8 Electrical Characteristics
VIN=3.8V, IOUT=100A, CIN=1.0F, COUT=2.2F, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2), unless otherwise specified. Parameter Enable Input Logic-low Voltage Enable Input Logic-high Voltage Enable Input Logic-low Current Symbol VIL VIH IIL IIH Conditions Regulator shutdown Regulator enabled VIL0.4V VIL0.18V VIL2.0V VIL2.0V 5 2.0 0.01 1 2 20 25 A Min Typ Max 0.4 0.18 V A Unit V
AP2210
Enable Input Logic-high Current
Note 2: Specifications in bold type are limited to -40oCTJ125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oCTJ125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current.
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BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2210-3.0 Electrical Characteristics
VIN=4V, IOUT=100A, CIN=1.0F, COUT=2.2F, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol VOUT/VOUT VOUT/ (VOUT/VOUT)/T VRLINE VRLOAD VIN=4V to 13.2V IOUT=0.1mA to 300mA IOUT=100A IOUT=50mA Dropout Voltage (Note 5) VDROP IOUT=100mA IOUT=150mA IOUT=300mA Standby Current ISTD VEN0.4V (shutdown) VEN0.18V (shutdown) VEN2.0V, IOUT=100A VEN2.0V, IOUT=50mA Ground Pin Current (Note 6) IGND VEN2.0V, IOUT=150mA VEN2.0V, IOUT=300mA Ripple Rejection Current Limit Output Noise PSRR ILIMIT eno f=100Hz, IOUT=100A VOUT=0V IOUT=50mA, COUT=2.2F, 100pF from BYP to GND 1.3 100 Conditions Variation from specified VOUT Min -1 -2 120 40 1.5 4.5 12 1 6 30 15 50 70 110 150 230 140 250 300 165 275 350 250 400 500 0.01 1 5 150 180 350 600 800 1.9 2.5 4 10 15 75 450 260 900 dB mA
nV / Hz
AP2210
Typ
Max 1 2
Unit % V/oC ppm/oC mV
mV
mV
A
A
mA
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BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2210-3.0 Electrical Characteristics
VIN=4V, IOUT=100A, CIN=1.0F, COUT=2.2F, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2), unless otherwise specified. Parameter Enable Input Logic-low Voltage Enable Input Logic-high Voltage Enable Input Logic-low Current Symbol VIL VIH IIL IIH Conditions Regulator shutdown Regulator enabled VIL0.4V VIL0.18V VIL2.0V VIL2.0V 5 2.0 0.01 1 2 20 25 A Min Typ Max 0.4 0.18 V A Unit V
AP2210
Enable Input Logic-high Current
Note 2: Specifications in bold type are limited to -40oCTJ125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oCTJ125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current.
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BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2210-3.3 Electrical Characteristics
VIN=4.3V, IOUT=100A, CIN=1.0F, COUT=2.2F, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol VOUT/VOUT VOUT/ (VOUT/VOUT)/T VRLINE VRLOAD VIN=4.3V to 13.2V IOUT=0.1mA to 300mA IOUT=100A IOUT=50mA Dropout Voltage (Note 5) VDROP IOUT=100mA IOUT=150mA IOUT=300mA Standby Current ISTD VEN0.4V (shutdown) VEN0.18V (shutdown) VEN2.0V, IOUT=100A VEN2.0V, IOUT=50mA Ground Pin Current (Note 6) IGND VEN2.0V, IOUT=150mA VEN2.0V, IOUT=300mA Ripple Rejection Current Limit Output Noise PSRR ILIMIT eno f=100Hz, IOUT=100A VOUT=0V IOUT=50mA, COUT=2.2F, 100pF from BYP to GND 1.3 100 Conditions Variation from specified VOUT Min -1 -2 120 36.3 1.5 4.5 12 1 6 30 15 50 70 110 150 230 140 250 300 165 275 350 250 400 500 0.01 1 5 150 180 350 600 800 1.9 2.5 4 10 15 75 450 260 900 dB mA
nV / Hz
AP2210
Typ
Max 1 2
Unit % V/oC ppm/oC mV
mV
mV
A
A
mA
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BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Electrical Characteristics (Continued) AP2210-3.3 Electrical Characteristics
VIN=4.3V, IOUT=100A, CIN=1.0F, COUT=2.2F, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2), unless otherwise specified. Parameter Enable Input Logic-low Voltage Enable Input Logic-high Voltage Enable Input Logic-low Current Symbol VIL VIH IIL IIH Conditions Regulator shutdown Regulator enabled VIL0.4V VIL0.18V VIL2.0V VIL2.0V 5 2.0 0.01 1 2 20 25 A Min Typ Max 0.4 0.18 V A Unit V
AP2210
Enable Input Logic-high Current
Note 2: Specifications in bold type are limited to -40oCTJ125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oCTJ125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current.
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BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Typical Performance Characteristics AP2210
3.0150 3.0125 3.0100 3.0075
550
AP2210-3.0 VIN=4V, IOUT=10mA
500 450
IOUT=50mA IOUT=100mA IOUT=150mA IOUT=300mA
CIN=1.0F, COUT=2.2F
Dropout Voltage (mv)
CIN=1.0F, COUT=2.2F
Output Voltage (V)
400 350 300 250 200 150 100 50 0
3.0050 3.0025 3.0000 2.9975 2.9950 2.9925 2.9900 2.9875 2.9850 -50 -25 0 25 50
o
75
100
125
-60
-40
-20
0
20
40
60
80
o
100
120
140
Junction Temperature ( C)
Junction Temperature ( C)
Figure 4. Output Voltage vs. Junction Temperature
Figure 5. Dropout Voltage vs. Junction Temperature
5.0 4.5 4.0
5.0 4.5
TA=25 C
o
AP2210-3.0 VIN=4V,CIN=1.0F,COUT=2.2F
Ground Pin Current (mA)
Ground Pin Current (mA)
CIN=1.0F, COUT=2.2F
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 50 100 150 200 250 300
IOUT=50mA IOUT=100mA IOUT=150mA IOUT=300mA
0.0 -60 -40 -20 0 20 40 60 80
o
100
120
140
Output Current (mA)
Junction Temperature ( C)
Figure 6. Ground Pin Current vs. Output Current
Figure 7. Ground Pin Current vs. Junction Temperature
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BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Typical Performance Characteristics (Continued) AP2210
20 18 16
2.0
AP2210-3.0 VIN=4V, CIN=1.0F COUT=2.2F, IOUT=100A
VEN=1.8V VEN=2.0V VEN=3.0V VEN=3.7V
Enable Voltage (V)
1.8 1.6 1.4 1.2
AP2210-3.0 CIN=1.0F, COUT=2.2F VIN=4V, IOUT=100A
Enable Current (A)
14 12 10 8 6
VEN=logic high
1.0 0.8
VEN=logic low
4 2 0 -50
0.6 0.4 -50
-25
0
25
50
o
75
100
125
-25
0
25
50
o
75
100
125
Junction Temperature ( C)
Junction Temperature ( C)
Figure 8. Enable Current vs. Junction Temperature
Figure 9. Enable Voltage vs. Junction Temperature
200
10
IOUT=10mA CIN=1.0F, COUT=2.2F
150
1
Noise Measurement Filter: DIN Noise
Output Noise ( V/ Hz )
Noise (Vrms)
0.1
100
0.01
50
AP2210-3.0 VIN=4.5V, IOUT=10mA
0.001
CIN=1.0F, COUT=2.2F CBYP=100pF
0 10
0.0001
100 1000 10000
10
100
1k
10k
100k
1M
10M
Bypass Capacitor (pF)
Frequency (Hz)
Figure 10. Noise vs. Bypass Capacitor
Figure 11. Output Noise vs. Frequency
Mar. 2007 Rev. 1. 2 14
BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Typical Performance Characteristics (Continued) AP2210
600
5.5
AP2210-3.0 VIN (0.5V/Div)
IOUT (200mA/Div)
400 200 0
5 4.5 4
AP2210-3.0
VOUT (50mV/Div)
VOUT (50mV/Div)
50 0 -50
50 0 -50
-100
Time (20s/Div)
-100
Time (20s/Div)
Figure 12. Load Transient (Conditions: VIN=4V, VEN=2V, IOUT=10mA to 300mA, CIN=1.0F, COUT=2.2F)
Figure 13. Line Transient (Conditions: VIN=4 to 5V, VEN=2V, IOUT=1mA, COUT=2.2F)
6
VEN (2V/Div)
100 90
4 2 0
AP2210-3.0
80 70
AP2210-3.0 VIN=4V, VRIPPLE=1VPP IOUT=10mA, COUT=2.2F
PSRR (dB)
60 50 40 30 20 10
VOUT (2V/Div)
2 0 -2 -4
Time (40s/Div)
0 10
100
1k
10k
100k
1M
Frequency (Hz)
Figure 14. VEN vs. VOUT (Conditions: VEN=0 to 2V, VIN=4V, IOUT=30mA, CIN=1.0F, COUT=2.2F)
Figure 15. PSRR vs. Frequency
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Data Sheet 300mA RF ULDO REGULATOR Typical Performance Characteristics (Continued) AP2210
0.9 0.8 0.7
0.9
AP2210-3.0 SOT-23-3 Package No Heatsink
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 25
0.6 0.5 0.4 0.3 0.2 0.1 0.0 25
Power Dissipation (W)
Power Dissipation (W)
AP2210-3.0 SOT-23-5 Package No Heatsink
50
75
100
o
125
150
50
75
100
o
125
150
Ambient Temperature ( C)
Ambient Temperature ( C)
Figure 16. Power Dissipation vs. Ambient Temperature
Figure 17. Power Dissipation vs. Ambient Temperature
1000
1000
COUT=1F
100
COUT=2.2F
100
No Bypass Capacitor
No Bypass Capacitor
ESR ()
1
Stable Area
ESR ()
10
10
1
Stable Area
0.1
0.1
0.01 50 100 150 200 250 300
0.01 50 100 150 200 250 300
Output Current (mA)
Output Current (mA)
Figure 18. ESR vs. Output Current
Figure 19. ESR vs. Output Current
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BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Typical Performance Characteristics (Continued) AP2210
1000
COUT=4.7F
100
No Bypass Capacitor
10
ESR ()
1
Stable Area
0.1
0.01 50 100 150 200 250 300
Output Current (mA)
Figure 20. ESR vs. Output Current
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Data Sheet 300mA RF ULDO REGULATOR Typical Application AP2210
VIN=4.0V VIN
AP2210-3.0
VIN VOUT
VOUT=3.0V VOUT
CIN 1.0 F
GND
COUT 2.2 F
VIN=4.0V VIN
AP2210-3.0
VIN GND VOUT
VOUT=3.0V VOUT
CIN 1.0 F EN BYP C BYP 100pF
COUT 2.2 F
Figure 21. Typical Application of AP2210 (Note 7)
Note 7: Dropout voltage is 250mV when TA=25oC. In order to obtain a normal output voltage, VOUT+0.25V is the minimum input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage is VOUT+1V to 13.2V. For AP2210-3.0 version, its input voltage can be set from 4V(VOUT+1V) to 13.2V.
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BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Application Information
Input Capacitor A 1F minimum capacitor is recommended to be placed between VIN and GND. Output Capacitor It is required to prevent oscillation. 1.0F minimum is recommended when CBYP is unused. 2.2F minimum is recommended when CBYP is 100pF. The output capacitor may be increased to improve transient response. Noise Bypass Capacitor Bypass capacitor is connected to the internal voltage reference. A 100pF capacitor connected from BYP to GND make this reference quiet, resulting in a significant reduction in output noise, but the ESR stable area will be narrowed. The start-up speed of the AP2210 is inversely proportional to the value of reference bypass capacitor. In some cases, if output noise is not a major concern and rapid turn-on is necessary, omit CBYP and leave BYP open. Power Dissipation Thermal shutdown may take place if exceeding the maximum power dissipation in application. Under all possible operating conditions, the junction temperature must be within the range specified under absolute maximum ratings to avoid thermal shutdown. To determine if the power dissipated in the regulator reaches the maximum power dissipation (see figure 16, 17), using: TJ = PD*JA + TA PD=(VIN-VOUT)*IOUT+VIN*IGND Where: TJTJ(max), TJ(max) is absolute maximum ratings for the junction temperature; VIN*IGND can be ignored due to its small value. TJ(max) is 150oC, JA is 200oC/W, no heatsink is required since the package alone will dissipate enough heat to satisfy these requirements unless the calculated value for power dissipation exceeds the limit. Example (3.0V version): IOUT=300mA, TA=50oC, VIN(Max) is: (150oC-50oC)/(0.3A*200oC/W)+3.0V=4.67V Therefore, for good performance, please make sure that input voltage is less than 4.67V without heatsink when TA=50oC.
AP2210
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Data Sheet 300mA RF ULDO REGULATOR Mechanical Dimensions SOT-23-3 Unit: mm(inch) AP2210
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BCD Semiconductor Manufacturing Limited
Data Sheet 300mA RF ULDO REGULATOR Mechanical Dimensions (Continued) SOT-23-5 Unit: mm(inch) AP2210
2.820(0.111) 3.020(0.119)
0.100(0.004) 0.200(0.008)
2.650(0.104)
2.950(0.116)
1.500(0.059) 1.700(0.067)
0.200(0.008)
0.700(0.028) REF
0.950(0.037) TYP
0.300(0.012) 0.400(0.016) 1.800(0.071) 2.000(0.079)
0.300(0.012) 0.600(0.024)
0 8
1.050(0.041)
1.250(0.049)
0.000(0.000) 0.100(0.004)
1.050(0.041) 1.150(0.045)
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BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others.
MAIN SITE BCD Semiconductor Manufacturing Limited
- Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
- IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
REGIONAL SALES OFFICE
Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788

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Price & Availability of AP2210N-25TRE1

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